Angel Technology Electronics Co
Shenzhen Angel Technology Electronics Co Electronic components distributor and PCBA manufacturer
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IRF1404ZPBF Transistors N-Channel 180A 200W Through Hole TO-220AB HEXFET FETs MOSFETs
N-Channel 180A (Tc) 200W (Tc) Through Hole TO-220AB Specification:
| Category | Discrete Semiconductor Products |
| Transistors - FETs, MOSFETs - Single | |
| Mfr | Infineon Technologies |
| Series | HEXFET® |
| Package | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 3.7mOhm @ 75A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 4340 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 200W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
| Base Product Number | IRF1404 |
Description
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this product are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
| ATTRIBUTE | DESCRIPTION |
|---|---|
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Part number | IRF1404ZPBF |
| Base part number | IRF1404 |
| EU RoHS | Compliant with Exemption |
| ECCN (US) | EAR99 |
| Part Status | Active |
| HTS | 8541.29.00.95 |
