Angel Technology Electronics Co

Shenzhen Angel Technology Electronics Co Electronic components distributor and PCBA manufacturer

Manufacturer from China
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4 Years
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IRFB4310PBF 100V 130A FET HEXFET Power Mosfet IRFB7440PBF 40V 120A

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Angel Technology Electronics Co
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City:shenzhen
Province/State:hongkong
Country/Region:china
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IRFB4310PBF 100V 130A FET HEXFET Power Mosfet IRFB7440PBF 40V 120A

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Brand Name :Infineon Technologies/International Rectifier IOR
Model Number :IRFB7440PBF IRFB4310PBF IRFB4115PBF
Certification :ROHS
Place of Origin :CHINA
MOQ :10pieces
Price :Negotiated
Payment Terms :T/T, Western Union
Supply Ability :500000pcs
Delivery Time :2-15days
Packaging Details :Standard package
Family :Discrete Semiconductor Products
Category :Electronic Components-MOSFET (Metal Oxide)
Series :HEXFET MOSFET (Metal Oxide)
Base part number :IRFB4
Details :N-Channel 180A (Tc) 200W (Tc) Through Hole TO-220AB
Type :Transistors - FETs, MOSFETs - Single
Description :Transistors MOSFET N-CH TO220AB
Package :TO220
Mounting Type :Through hole
Stock :In Stock
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IRFB7440PBF 40V 120A IRFB4310PBF 100V 130A IRFB4115PBF 150v 104A Transistors TO-220AB HEXFET FETs MOSFETs

Transistors N-Channel 180A 200W Through Hole TO-220AB HEXFET FETs MOSFETs

---IRFB7440PBF 40V 120A IRFB4310PBF 100V 130A IRFB4115PBF 150v 104A​

Description:
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this product are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

N-Channel 180A (Tc) 200W (Tc) Through Hole TO-220AB Specification:

Category
Discrete Semiconductor Products
 
Transistors - FETs, MOSFETs - Single
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3.7mOhm @ 75A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
150 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4340 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
200W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Base Product Number
IRF1404


Environmental & Export Classifications
ATTRIBUTE DESCRIPTION
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095



IRFB4310PBF 100V 130A FET HEXFET Power Mosfet IRFB7440PBF 40V 120A

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